silicon mosfets (small signal) 1 publication date: january 2004 sjf00035bed 2SK3539 silicon n-channel mosfet for switching features ? high-speed switching ? wide frequency band ? gate protection diode built-in absolute maximum ratings t a = 25 c unit: mm 1: gate 2: source 3: drain eiaj: sc-70 smini3-g1 package electrical characteristics t a = 25 c 3 c parameter symbol conditions min typ max unit drain-source surrender voltage v dss i d = 10 a, v gs = 0 50 v drain-source cutoff current i dss v ds = 50 v, v gs = 0 1.0 a gate-source cutoff current i gss v gs = 7 v, v ds = 0 5.0 a gate threshold voltage v th i d = 1.0 a, v ds = 3 v 0.9 1.2 1.5 v drain-source on resistance r ds(on) i d = 10 ma, v gs = 2.5 v 8 15 ? i d = 10 ma, v gs = 4.0 v 6 12 forward trancfer admitance ? y fs ? i d = 10 ma, v ds = 3 v, f = 1 khz 20 60 ms short-circuit forward transfer c iss v ds = 3 v, v gs = 0, f = 1 mhz 12 pf capacitance (common source) short-circuit output capacitance (common source) c oss 7pf reverse transfer capacitance (common source) c rss 3pf turn-on time * t on v dd = 3 v, v gs = 0 v to 3 v, r l = 470 ? 200 ns turn-off time * t off v dd = 3 v, v gs = 3 v to 0 v, r l = 470 ? 200 ns note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * :t on , t off test circuit marking symbol: 5f v out v dd = 3 v v gs = 3.0 v 50 ? 470 ? 100 f v in 90% 10% 10% 90% v out t on t off 2.1 0.1 1.3 0.1 0.3 +0.1 ?0.0 2.0 0.2 1.25 0.10 (0.425) 1 3 2 (0.65) (0.65) 0.2 0.1 0.9 0.1 0 to 0.1 0.9 +0.2 ?0.1 0.15 +0.10 ?0.05 5? 10? parameter symbol rating unit drain-source voltage v ds 50 v gate-source voltage (drain open) v gso 7v drain current i d 100 ma peak drain current i dp 200 ma power dissipation p d 150 mw channel temperature t ch 150 c storage temperature t stg ? 55 to + 150 c
2SK3539 2 sjf00035bed ? y fs ? ? v gs r ds(on) ? v gs v in ? i o p d ? t a i d ? v ds i d ? v gs ambient temperature t a ( c) power dissipation p d (mw) 160 120 80 40 0 40 80 160 120 0 drain-source voltage v ds (v) drain current i d (ma) 60 40 20 0 48 0 t a = 25 c v gs = 2.0 v 1.9 v 1.8 v 1.7 v 1.6 v 1.5 v gate-source voltage v gs (v) drain current i d (ma) 250 200 150 100 50 0 123 0 v ds = 3 v t a = ? 25 c 25 c 75 c gate-source voltage v gs (v) 0.16 0.12 0.08 0.04 0 0.5 1.0 1.5 2.0 2.5 3.0 0 forward trancfer admitance ? ? = 3 v f = 1 mhz t a = 25 c gate-source voltage v gs (v) drain-source on resistance r ds(on) ( ? ) 60 50 40 30 20 10 0 246 0 t a = 75 c i d = 10 ma 25 c ? 25 c output current i o ( ma ) input voltage v in (v) 10 ? 1 1 1 10 10 10 2 10 3 v o = 5 v t c = 25 c
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